4
RF Device Data
Freescale Semiconductor
MRF8S9200NR3
Figure 1. MRF8S9200NR3 Test Circuit Component Layout
MRF8S9200N
Rev 0
CUT OUT AREA
R1
VGS
VDS
B1
C31
C1
C2
C4
C5
R2
C6 C7
C3
C8 C9
C30
C32
C23 C24
C27 C28
C12
C13
C15 C16 C17 C18 C20
C14
C19
C10
C11
C21
C22
C25 C26
C29
Table 6. MRF8S9200NR3 Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
B1
Ferrite Beads, Short
2743019447
Fair--Rite
C1, C5, C19, C21, C22,
C23, C24
39 pF Chip Capacitors
ATC100B390JT500XT
ATC
C2
2 pF Chip Capacitor
ATC100B2R0BT500XT
ATC
C3
6.2 pF Chip Capacitor
ATC100B6R2BT500XT
ATC
C4
2.2
μF Chip Capacitor
C1825C225J5RAC--TU
Kemet
C6, C7, C8, C9
3.3 pF Chip Capacitors
ATC100B3R3CT500XT
ATC
C10, C12
6.8 pF Chip Capacitors
ATC100B6R8CT500XT
ATC
C11, C13
5.1 pF Chip Capacitors
ATC100B5R1CT500XT
ATC
C14, C20
0.8 pF Chip Capacitors
ATC100B0R8BT500XT
ATC
C15, C17
0.5 pF Chip Capacitors
ATC100B0R5BT500XT
ATC
C16
1.5 pF Chip Capacitor
ATC100B1R5BT500XT
ATC
C18
1.2 pF Chip Capacitor
ATC100B1R2BT500XT
ATC
C25, C26, C27, C28
10
μF, 50 V Chip Capacitors
GRM55DR61H106KA88L
Murata
C29, C30
470
μF, Electrolytic Capacitors
MCGPR63V477M13X26--RH
Multicomp
C31
47
μF, 50 V Electrolytic Capacitor
476KXM050M
Illinois Cap.
C32
10 pF Chip Capacitor
ATC100B100JT500XT
ATC
R1
3.3
?, 1/2 W Chip Resistor
P3.3VCT--ND
Panasonic
R2
0
?, 3.5 A Chip Resistor
CRCW12060000Z0EA
Vishay
PCB
0.030″,
εr
=3.5
RF--35
Taconic
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相关代理商/技术参数
MRF8S9200NR3_10 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET
MRF8S9202GNR3 功能描述:射频MOSFET电源晶体管 HV8 900MHz 58W OM780-2G RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF8S9202N 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N-Channel Enhancement--Mode Lateral MOSFET
MRF8S9202N_12 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors
MRF8S9202NR3 功能描述:射频MOSFET电源晶体管 HV8 900MHZ 58W OM780-2 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF8S9220HR3 功能描述:射频MOSFET电源晶体管 HV8 900MHZ 66W NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF8S9220HR5 功能描述:射频MOSFET电源晶体管 HV8 900MHZ 66W NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF8S9220HSR3 功能描述:射频MOSFET电源晶体管 HV8 WCDMA 66W 28V NI780S RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray